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BUK951R6-30E,127
BUK951R6-30E,127

BUK951R6-30E,127

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Product Code: BUK951R6-30E,127
Availability: In Stock
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Price: $18.58
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 1405 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 120A Tc
  • Drain Current-Max (Abs) (ID) 120A
  • Drain to Source Voltage (Vdss) 30V
  • Drain-source On Resistance-Max 0.0016Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 5V 10V
  • DS Breakdown Voltage-Min 30V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 113nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds 16150pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Obsolete
  • Pin Count 3
  • Power Dissipation-Max 349W Tc
  • Published 2012
  • Pulsed Drain Current-Max (IDM) 1400A
  • Rds On (Max) @ Id, Vgs 1.4m Ω @ 25A, 10V
  • Reach Compliance Code not_compliant
  • Reference Standard AEC-Q101; IEC-60134
  • RoHS Status ROHS3 Compliant
  • Series TrenchMOS™
  • Surface Mount NO
  • Terminal Finish Tin (Sn)
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±10V
  • Vgs(th) (Max) @ Id 2.1V @ 1mA

Product Description

NXP USA Inc.

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