SPD18P06P

SPD18P06P

Product Code: SPD18P06P
Availability: In Stock
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Price: $8.95
0 sold. Only 1899 remain

Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 150 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 18.6A Tc
  • Drain Current-Max (Abs) (ID) 18.6A
  • Drain to Source Voltage (Vdss) 60V
  • Drain-source On Resistance-Max 0.13Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 60V
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 4
  • Power Dissipation-Max 80W Tc
  • Pulsed Drain Current-Max (IDM) 74.4A
  • Qualification Status COMMERCIAL
  • Rds On (Max) @ Id, Vgs 130m Ω @ 13.2A, 10V
  • Reach Compliance Code unknown
  • RoHS Status ROHS3 Compliant
  • Series SIPMOS®
  • Surface Mount YES
  • Terminal Finish MATTE TIN
  • Terminal Form GULL WING
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 1mA

Product Description

Rochester Electronics, LLC

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