TSM60N600CI C0G
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$19.84
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Item specifics
- Current - Continuous Drain (Id) @ 25°C 8A Tc
- Drain to Source Voltage (Vdss) 600V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 743pF @ 100V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Through Hole
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Packaging Tube
- Part Status Not For New Designs
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation-Max 83W Tc
- Rds On (Max) @ Id, Vgs 600m Ω @ 4A, 10V
- RoHS Status ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4V @ 250μA
Product Description
Taiwan Semiconductor Corporation
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