APT77N60BC6

APT77N60BC6

Product Code: APT77N60BC6
Availability: In Stock
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Price: $16.89
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Item specifics

  • Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 77A
  • Current - Continuous Drain (Id) @ 25°C 77A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 8 ns
  • FET Feature Super Junction
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 5.31mm
  • Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e1
  • Length 21.46mm
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Pin Count 3
  • Power Dissipation 481W
  • Power Dissipation-Max 481W Tc
  • Published 1997
  • Pulsed Drain Current-Max (IDM) 272A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 41m Ω @ 44.4A, 10V
  • Rise Time 27ns
  • RoHS Status RoHS Compliant
  • Series CoolMOS™
  • Terminal Finish TIN SILVER COPPER
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 18 ns
  • Turn-Off Delay Time 110 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.6V @ 2.96mA
  • Weight 38.000013g
  • Width 16.26mm

Product Description

Microsemi Corporation

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