APT75F50L

APT75F50L

Product Code: APT75F50L
Availability: In Stock
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Price: $0.57
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Item specifics

  • Additional Feature AVALANCHE RATED, HIGH RELIABILITY
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 75A
  • Current - Continuous Drain (Id) @ 25°C 75A Tc
  • Drain to Source Voltage (Vdss) 500V
  • Drain-source On Resistance-Max 0.075Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 500V
  • Fall Time (Typ) 39 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 11600pF @ 25V
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-264-3, TO-264AA
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Pin Count 3
  • Power Dissipation 1.04kW
  • Power Dissipation-Max 1040W Tc
  • Published 1997
  • Pulsed Drain Current-Max (IDM) 230A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 75m Ω @ 37A, 10V
  • Rise Time 55ns
  • RoHS Status RoHS Compliant
  • Series POWER MOS 8™
  • Terminal Finish PURE MATTE TIN
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 45 ns
  • Turn-Off Delay Time 120 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 2.5mA

Product Description

Microsemi Corporation

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