IPD65R600C6ATMA1
Item specifics
- Avalanche Energy Rating (Eas) 142 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max 0.6Ohm
- DS Breakdown Voltage-Min 650V
- FET Technology METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code TO-252
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Number of Elements 1
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature (Min) -55°C
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Polarity/Channel Type N-CHANNEL
- Published 2008
- Pulsed Drain Current-Max (IDM) 18A
- Reach Compliance Code not_compliant
- RoHS Status RoHS Compliant
- Surface Mount YES
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position SINGLE
- Transistor Application SWITCHING
- Transistor Element Material SILICON
Product Description
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