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SPI11N60CFDHKSA1
SPI11N60CFDHKSA1

SPI11N60CFDHKSA1

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Product Code: SPI11N60CFDHKSA1
Availability: In Stock
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Price: $6.22
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 340 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 11A Tc
  • Drain Current-Max (Abs) (ID) 11A
  • Drain to Source Voltage (Vdss) 650V
  • Drain-source On Resistance-Max 0.44Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 600V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
  • HTS Code 8541.29.00.95
  • Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
  • JESD-30 Code R-PSIP-T3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging Tube
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation-Max 125W Tc
  • Published 2005
  • Pulsed Drain Current-Max (IDM) 28A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 440m Ω @ 7A, 10V
  • Reach Compliance Code compliant
  • RoHS Status RoHS Compliant
  • Series CoolMOS™
  • Surface Mount NO
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 5V @ 500μA

Product Description

Infineon Technologies

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