BSC0908NSATMA1

BSC0908NSATMA1

Product Code: BSC0908NSATMA1
Availability: In Stock
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Price: $18.90
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Item specifics

  • Avalanche Energy Rating (Eas) 10 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 14A Ta 49A Tc
  • Drain Current-Max (Abs) (ID) 14A
  • Drain to Source Voltage (Vdss) 34V
  • Drain-source On Resistance-Max 0.0127Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • DS Breakdown Voltage-Min 34V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 15V
  • JESD-30 Code R-PDSO-F5
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 5
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case 8-PowerTDFN
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code no
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 8
  • Power Dissipation-Max 2.5W Ta 30W Tc
  • Published 2010
  • Pulsed Drain Current-Max (IDM) 200A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
  • Reach Compliance Code compliant
  • RoHS Status RoHS Compliant
  • Series OptiMOS™
  • Surface Mount YES
  • Terminal Form FLAT
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.2V @ 250μA

Product Description

Infineon Technologies

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