AUIRFZ24NSTRR

AUIRFZ24NSTRR

Product Code: AUIRFZ24NSTRR
Availability: In Stock
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Price: $12.76
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 71 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 17A Tc
  • Drain Current-Max (Abs) (ID) 17A
  • Drain to Source Voltage (Vdss) 55V
  • Drain-source On Resistance-Max 0.07Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 55V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V
  • JEDEC-95 Code TO-263AB
  • JESD-30 Code R-PDSO-G2
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) 260
  • Power Dissipation-Max 3.8W Ta 45W Tc
  • Published 2015
  • Pulsed Drain Current-Max (IDM) 68A
  • Rds On (Max) @ Id, Vgs 70m Ω @ 10A, 10V
  • Reach Compliance Code compliant
  • RoHS Status RoHS Compliant
  • Series HEXFET®
  • Surface Mount YES
  • Terminal Finish MATTE TIN OVER NICKEL
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 30
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

Infineon Technologies

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