APT11N80KC3G

APT11N80KC3G

Product Code: APT11N80KC3G
Availability: In Stock
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Price: $16.65
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Item specifics

  • Avalanche Energy Rating (Eas) 470 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 11A
  • Current - Continuous Drain (Id) @ 25°C 11A Tc
  • Current Rating 11A
  • Drain-source On Resistance-Max 0.45Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 7 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 9.66mm
  • Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e1
  • Lead Free Lead Free
  • Length 10.66mm
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Obsolete
  • Pbfree Code yes
  • Pin Count 3
  • Power Dissipation 156W
  • Power Dissipation-Max 156W Tc
  • Published 2012
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 450m Ω @ 7.1A, 10V
  • Rise Time 15ns
  • RoHS Status RoHS Compliant
  • Series CoolMOS™
  • Terminal Finish TIN SILVER COPPER
  • Terminal Position SINGLE
  • Transistor Element Material SILICON
  • Turn On Delay Time 25 ns
  • Turn-Off Delay Time 70 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.9V @ 680μA
  • Voltage - Rated DC 800V
  • Weight 6.000006g
  • Width 4.82mm

Product Description

Microsemi Corporation

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