IPT020N10N5ATMA1

IPT020N10N5ATMA1

Product Code: IPT020N10N5ATMA1
Availability: In Stock
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Price: $18.64
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Item specifics

  • Avalanche Energy Rating (Eas) 406 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 31A Ta 260A Tc
  • Drain Current-Max (Abs) (ID) 31A
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.002Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 6V 10V
  • DS Breakdown Voltage-Min 100V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 50V
  • JESD-30 Code R-PSSO-F8
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 8
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case 8-PowerSFN
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 273W Tc
  • Pulsed Drain Current-Max (IDM) 1039A
  • Rds On (Max) @ Id, Vgs 2m Ω @ 150A, 10V
  • Reach Compliance Code compliant
  • RoHS Status RoHS Compliant
  • Series OptiMOS™5
  • Surface Mount YES
  • Terminal Form FLAT
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.8V @ 202μA

Product Description

Infineon Technologies

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