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APTM120UM95FAG
APTM120UM95FAG

APTM120UM95FAG

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Product Code: APTM120UM95FAG
Availability: In Stock
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Price: $6.42
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 3000 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 103A
  • Current - Continuous Drain (Id) @ 25°C 103A Tc
  • Drain to Source Voltage (Vdss) 1200V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 1122nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 30900pF @ 25V
  • JESD-30 Code R-PUFM-X2
  • JESD-609 Code e1
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • Number of Elements 1
  • Number of Pins 6
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -40°C~150°C TJ
  • Package / Case SP6
  • Packaging Bulk
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 2
  • Power Dissipation-Max 2272W Tc
  • Published 2006
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 114m Ω @ 51.5A, 10V
  • RoHS Status RoHS Compliant
  • Terminal Finish TIN SILVER COPPER
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 15mA

Product Description

Microsemi Corporation

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