APTM120DA56T1G

APTM120DA56T1G

Product Code: APTM120DA56T1G
Availability: In Stock
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Price: $18.27
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
  • Continuous Drain Current (ID) 18A
  • Current - Continuous Drain (Id) @ 25°C 18A Tc
  • Drain to Source Voltage (Vdss) 1200V
  • Drain-source On Resistance-Max 0.672Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 48 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 7736pF @ 25V
  • JESD-609 Code e1
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • Number of Elements 1
  • Number of Pins 1
  • Number of Terminations 12
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -40°C~150°C TJ
  • Package / Case SP1
  • Packaging Bulk
  • Part Status Obsolete
  • Pbfree Code yes
  • Pin Count 12
  • Power Dissipation 390W
  • Power Dissipation-Max 390W Tc
  • Published 2016
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 672m Ω @ 14A, 10V
  • Rise Time 31ns
  • RoHS Status RoHS Compliant
  • Terminal Finish TIN SILVER COPPER
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 50 ns
  • Turn-Off Delay Time 170 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 2.5mA

Product Description

Microsemi Corporation

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