VN2410L-G
Item specifics
- Additional Feature HIGH INPUT IMPEDANCE
- Base Product Number VN2410
- Brand Microchip Technology / Atmel
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Contact Plating Tin
- Continuous Drain Current (ID) 190mA
- Continuous Drain Current Id 190
- Current 2A
- Current - Continuous Drain (Id) @ 25°C 190mA Tj
- Drain to Source Breakdown Voltage 240V
- Drain to Source Voltage (Vdss) 240V
- Drain-source On Resistance-Max 10 Ω
- Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
- DS Breakdown Voltage-Min 240 V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 24 ns
- Feedback Cap-Max (Crss) 20 pF
- FET Feature --
- FET Technology METAL-OXIDE SEMICONDUCTOR
- FET Type N-Channel
- Gate to Source Voltage (Vgs) 20V
- Height 5.334mm
- Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
- JEDEC-95 Code TO-92
- JESD-30 Code O-PBCY-T3
- JESD-609 Code e3
- Length 5.21mm
- Manufacturer Microchip
- Maximum Operating Temperature +150 °C
- Mfr Microchip Technology
- Minimum Operating Temperature -55 °C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- Number of Channels 1
- Number of Elements 1
- Number of Elements per Chip 1
- Number of Pins 3
- Number of Terminals 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package Bag
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Package Shape ROUND
- Package Type TO-92
- Packaging Bulk
- Part Status Active
- Peak Reflow Temperature (Cel) NOT APPLICABLE
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power Dissipation 1W
- Power Dissipation (Max) 1W (Tc)
- Power Dissipation-Max 1W Tc
- Product Category MOSFET
- Product Status Active
- Product Type MOSFET
- Published 2005
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
- Reach Compliance Code compliant
- Rise Time 8ns
- RoHS Details
- RoHS Status ROHS3 Compliant
- Series --
- Subcategory MOSFETs
- Supplier Device Package TO-92-3
- Surface Mount NO
- Terminal Finish Matte Tin (Sn)
- Terminal Form THROUGH-HOLE
- Terminal Position BOTTOM
- Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Transistor Type 1 N-Channel
- Turn On Delay Time 8 ns
- Turn-Off Delay Time 23 ns
- Type FET
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2V @ 1mA
- Voltage 240V
- Weight 453.59237mg
- Width 4.19mm
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