IXFB44N100P

IXFB44N100P

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Product Code: IXFB44N100P
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 2000 mJ
  • Base Product Number IXFB44
  • Brand IXYS
  • Case Connection DRAIN
  • Channel Mode Enhancement
  • Channel Type N Channel
  • Configuration Single
  • Continuous Drain Current (ID) 44A
  • Continuous Drain Current Id 44A
  • Current - Continuous Drain (Id) @ 25°C 44A Tc
  • Drain Current-Max (Abs) (ID) 44 A
  • Drain to Source Breakdown Voltage 1kV
  • Drain to Source Resistance 220 mΩ
  • Drain to Source Voltage (Vdss) 1000V
  • Drain-source On Resistance-Max 0.22Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 1000 V
  • Element Configuration Single
  • Fall Time (Typ) 56 ns
  • FET Feature --
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 26.59 mm
  • Input Capacitance 19 nF
  • Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
  • JESD-30 Code R-PSIP-T3
  • JESD-609 Code e1
  • Lead Free Lead Free
  • Length 20.29 mm
  • Manufacturer IXYS
  • Max Operating Temperature 150 °C
  • Max Power Dissipation 1.25 kW
  • Maximum Operating Temperature + 150 C
  • Mfr IXYS
  • Min Operating Temperature -55 °C
  • Minimum Operating Temperature - 55 C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Style Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1 Channel
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminals 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package Tube
  • Package / Case TO-264-3, TO-264AA
  • Package Shape RECTANGULAR
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Polarity/Channel Type N-CHANNEL
  • Power Dissipation 1.25kW
  • Power Dissipation (Max) 1250W (Tc)
  • Power Dissipation-Max 1250W Tc
  • Power Dissipation-Max (Abs) 1250 W
  • Product Category MOSFET
  • Product Status Active
  • Product Type MOSFET
  • Published 2008
  • Pulsed Drain Current-Max (IDM) 110A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 220m Ω @ 22A, 10V
  • Rds On Max 220 mΩ
  • Reach Compliance Code compliant
  • Rise Time 68ns
  • RoHS Details
  • RoHS Status ROHS3 Compliant
  • Series HiPerFET™, PolarP2™
  • Supplier Device Package PLUS264™
  • Surface Mount NO
  • Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
  • Terminal Form THROUGH-HOLE
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Tradename HiPerFET
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Transistor Polarity N-Channel
  • Transistor Type 1 N-Channel
  • Turn-Off Delay Time 90 ns
  • Type Polar Power MOSFET HiPerFET
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 6.5V @ 1mA
  • Width 5.31 mm

Product Description

IXYS

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