DN2530N3-G
Item specifics
- Base Product Number DN2530
- Brand Microchip Technology / Atmel
- Channel Mode Depletion
- Channel Type N
- Configuration Single
- Continuous Drain Current (ID) 175mA
- Continuous Drain Current Id 175
- Current - Continuous Drain (Id) @ 25°C 175mA Tj
- Drain to Source Breakdown Voltage 300V
- Drain to Source Voltage (Vdss) 300V
- Drain-source On Resistance-Max 12 Ω
- Drive Voltage (Max Rds On,Min Rds On) 0V
- DS Breakdown Voltage-Min 300 V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 15 ns
- Feedback Cap-Max (Crss) 5 pF
- FET Feature Depletion Mode
- FET Technology METAL-OXIDE SEMICONDUCTOR
- FET Type N-Channel
- Gate to Source Voltage (Vgs) 20V
- Height 5.33mm
- HTS Code 8541.21.00.95
- Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
- JEDEC-95 Code TO-92
- JESD-30 Code O-PBCY-W3
- JESD-609 Code e3
- Lead Free Lead Free
- Length 5.21mm
- Manufacturer Microchip
- Maximum Operating Temperature +150 °C
- Mfr Microchip Technology
- Minimum Operating Temperature -55 °C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- Number of Channels 1
- Number of Elements 1
- Number of Elements per Chip 1
- Number of Pins 3
- Number of Terminals 3
- Number of Terminations 3
- Operating Mode DEPLETION MODE
- Operating Temperature -55°C~150°C TJ
- Package Bag
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Package Shape ROUND
- Package Type TO-92
- Packaging Bulk
- Part Status Active
- Peak Reflow Temperature (Cel) NOT APPLICABLE
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power Dissipation 740mW
- Power Dissipation (Max) 740mW (Ta)
- Power Dissipation-Max 740mW Ta
- Power Dissipation-Max (Abs) 0.74 W
- Product MOSFET Small Signal
- Product Category MOSFET
- Product Status Active
- Product Type MOSFET
- Published 2013
- Qualification Status Not Qualified
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 12 Ω @ 150mA, 0V
- Reach Compliance Code compliant
- REACH SVHC No SVHC
- Rise Time 15ns
- RoHS Details
- RoHS Status ROHS3 Compliant
- Series --
- Supplier Device Package TO-92 (TO-226)
- Surface Mount NO
- Terminal Finish Matte Tin (Sn)
- Terminal Form WIRE
- Terminal Position BOTTOM
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Transistor Type 1 N-Channel
- Turn On Delay Time 10 ns
- Turn-Off Delay Time 15 ns
- Type FET
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id --
- Weight 453.59237mg
- Width 4.19mm
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