APT37F50B

Item specifics

• Base Product Number APT37F50
• Channel Mode Enhancement
• Channel Type N
• Configuration Single
• Continuous Drain Current (ID) 37 A
• Continuous Drain Current Id 37
• Current - Continuous Drain (Id) @ 25°C 37A (Tc)
• Current Rating 37 A
• Drain to Source Breakdown Voltage 500 V
• Drain to Source Resistance 130 mΩ
• Drain to Source Voltage (Vdss) 500 V
• Drive Voltage (Max Rds On, Min Rds On) 10V
• FET Type N-Channel
• Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
• Gate to Source Voltage (Vgs) 30 V
• Height 5.31 mm
• Input Capacitance 5.71 nF
• Input Capacitance (Ciss) (Max) @ Vds 5710 pF @ 25 V
• Lead Free Lead Free
• Length 21.46 mm
• Lifecycle Status Production (Last Updated: 2 months ago)
• Max Operating Temperature 150 °C
• Max Power Dissipation 520 W
• Maximum Operating Temperature + 150 C
• Mfr Microchip Technology
• Min Operating Temperature -55 °C
• Minimum Operating Temperature - 55 C
• Mount Through Hole
• Mounting Style Through Hole
• Mounting Type Through Hole
• Number of Channels 1 Channel
• Number of Elements 1
• Operating Temperature -55°C ~ 150°C (TJ)
• Package Tube
• Package / Case TO-247-3
• Packaging Tube
• Power Dissipation 520
• Power Dissipation (Max) 520W (Tc)
• Product Status Active
• Radiation Hardening No
• Rds On (Max) @ Id, Vgs 150mOhm @ 18A, 10V
• Rds On Max 150 mΩ
• Rise Time 29 ns
• RoHS Details
• Supplier Device Package TO-247 [B]
• Tradename Power MOS 8
• Transistor Polarity N-Channel
• Turn-Off Delay Time 65 ns
• Turn-On Delay Time 25 ns
• Vgs (Max) ±30V
• Vgs(th) (Max) @ Id 5V @ 1mA
• Voltage Rating (DC) 500 V
• Weight 38.000013 g
• Width 16.26 mm

Product Description