VP0808L-G
Item specifics
- Additional Feature HIGH INPUT IMPEDANCE
- Base Product Number VP0808
- Brand Microchip Technology / Atmel
- Channel Mode Enhancement
- Channel Type P Channel
- Configuration Single
- Continuous Drain Current 0.28(A)
- Continuous Drain Current (ID) 280mA
- Continuous Drain Current Id 280mA
- Current - Continuous Drain (Id) @ 25°C 280mA Tj
- Drain Current-Max (Abs) (ID) 0.28A
- Drain to Source Breakdown Voltage -80V
- Drain to Source Voltage (Vdss) 80V
- Drain-source On Resistance-Max 5Ohm
- Drain-Source On-Volt 80(V)
- Drive Voltage (Max Rds On,Min Rds On) 10V
- DS Breakdown Voltage-Min 80 V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 30 ns
- Feedback Cap-Max (Crss) 25 pF
- FET Feature --
- FET Technology METAL-OXIDE SEMICONDUCTOR
- FET Type P-Channel
- Gate to Source Voltage (Vgs) 30V
- Gate-Source Voltage (Max) ±30(V)
- Height 5.33mm
- Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
- JEDEC-95 Code TO-92
- JESD-30 Code O-PBCY-T3
- JESD-609 Code e3
- Lead Free Lead Free
- Length 5.21mm
- Manufacturer Microchip
- Maximum Operating Temperature + 150 C
- Mfr Microchip Technology
- Minimum Operating Temperature - 55 C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminals 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temp Range -55C to 150C
- Operating Temperature -55°C~150°C TJ
- Operating Temperature Classification Military
- Package Bag
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Package Shape ROUND
- Package Type TO-92
- Packaging Bulk
- Part Status Active
- Peak Reflow Temperature (Cel) NOT APPLICABLE
- Pin Count 3
- Polarity P
- Polarity/Channel Type P-CHANNEL
- Power Dissipation 1W
- Power Dissipation (Max) 1W (Tc)
- Power Dissipation-Max 1W Tc
- Power Dissipation-Max (Abs) 1 W
- Product Category MOSFET
- Product Status Active
- Product Type MOSFET
- Published 2013
- Qualification Status Not Qualified
- Rad Hardened No
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 5 Ω @ 1A, 10V
- Reach Compliance Code compliant
- Rise Time 40ns
- RoHS Details
- RoHS Status ROHS3 Compliant
- Series --
- Subcategory MOSFETs
- Supplier Device Package TO-92-3
- Surface Mount NO
- Terminal Finish Matte Tin (Sn)
- Terminal Form THROUGH-HOLE
- Terminal Position BOTTOM
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity P-Channel
- Transistor Type 1 P-Channel
- Turn On Delay Time 15 ns
- Turn-Off Delay Time 30 ns
- Type Power MOSFET
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Weight 453.59237mg
- Width 4.19mm
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