IXTQ100N25P
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 2000 mJ
- Base Product Number IXTQ100
- Brand IXYS
- Case Connection DRAIN
- Channel Mode Enhancement
- Channel Type N Channel
- Configuration Single
- Continuous Drain Current (ID) 100A
- Continuous Drain Current Id 100A
- Current - Continuous Drain (Id) @ 25°C 100A Tc
- Drain to Source Breakdown Voltage 250V
- Drain to Source Resistance 27 mΩ
- Drain to Source Voltage (Vdss) 250 V
- Drain-source On Resistance-Max 0.027 Ω
- Drive Voltage (Max Rds On,Min Rds On) 10V
- DS Breakdown Voltage-Min 250 V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 28 ns
- FET Technology METAL-OXIDE SEMICONDUCTOR
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 20.3 mm
- Input Capacitance 6.3 nF
- Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
- JESD-30 Code R-PSFM-T3
- JESD-609 Code e3
- Lead Free Lead Free
- Length 15.8 mm
- Manufacturer IXYS
- Max Operating Temperature 150 °C
- Max Power Dissipation 600 W
- Maximum Operating Temperature + 150 C
- Mfr IXYS
- Min Operating Temperature -55 °C
- Minimum Operating Temperature - 55 C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- Number of Channels 1 Channel
- Number of Elements 1
- Number of Pins 3
- Number of Terminals 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package Tube
- Package / Case TO-3P-3, SC-65-3
- Package Shape RECTANGULAR
- Packaging Tube
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power Dissipation 600W
- Power Dissipation (Max) 600W (Tc)
- Power Dissipation-Max 600W Tc
- Product Category MOSFET
- Product Status Active
- Product Type MOSFET
- Published 2006
- Pulsed Drain Current-Max (IDM) 250A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 24m Ω @ 50A, 10V
- Rds On Max 24 mΩ
- Reach Compliance Code compliant
- REACH SVHC No SVHC
- Resistance 27MOhm
- Rise Time 26ns
- RoHS Details
- RoHS Status ROHS3 Compliant
- Series PolarHT™
- Subcategory MOSFETs
- Supplier Device Package TO-3P
- Surface Mount NO
- Terminal Finish Matte Tin (Sn)
- Terminal Form THROUGH-HOLE
- Terminal Position SINGLE
- Threshold Voltage 5V
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Tradename PolarHT
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Transistor Type 1 N-Channel
- Turn-Off Delay Time 100 ns
- Type PolarHT Power MOSFET
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 5V @ 250μA
- Width 4.9 mm
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