APT7F120B
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 575 mJ
- Base Product Number APT7F120
- Channel Mode Enhancement
- Configuration Single
- Continuous Drain Current (ID) 7 A
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Current Rating 6.6 A
- Drain to Source Resistance 1.57 Ω
- Drain to Source Voltage (Vdss) 1.2 kV
- Drain-source On Resistance-Max 2.9 Ω
- Drive Voltage (Max Rds On, Min Rds On) 10V
- DS Breakdown Voltage-Min 1200 V
- FET Technology METAL-OXIDE SEMICONDUCTOR
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Gate to Source Voltage (Vgs) 30 V
- Height 5.31 mm
- Input Capacitance 2.565 nF
- Input Capacitance (Ciss) (Max) @ Vds 2565 pF @ 25 V
- JEDEC-95 Code TO-247AB
- JESD-30 Code R-PSFM-T3
- JESD-609 Code e1
- Lead Free Lead Free
- Length 21.46 mm
- Lifecycle Status Production (Last Updated: 1 month ago)
- Max Operating Temperature 150 °C
- Max Power Dissipation 335 W
- Maximum Operating Temperature + 150 C
- Mfr Microchip Technology
- Min Operating Temperature -55 °C
- Minimum Operating Temperature - 55 C
- Mount Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- Number of Channels 1 Channel
- Number of Elements 1
- Number of Terminals 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C ~ 150°C (TJ)
- Package Tube
- Package / Case TO-247-3
- Package Shape RECTANGULAR
- Packaging Tube
- Pbfree Code Yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power Dissipation 335 W
- Power Dissipation (Max) 335W (Tc)
- Product Status Active
- Pulsed Drain Current-Max (IDM) 28 A
- Qualification Status Not Qualified
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2.9Ohm @ 3A, 10V
- Rds On Max 2.9 Ω
- Reach Compliance Code unknown
- Resistance 2.4 Ω
- Rise Time 8 ns
- RoHS Details
- Schedule B 8541290080
- Supplier Device Package TO-247 [B]
- Surface Mount NO
- Terminal Finish TIN SILVER COPPER
- Terminal Form THROUGH-HOLE
- Terminal Position SINGLE
- Tradename Power MOS 8
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Turn-Off Delay Time 45 ns
- Turn-On Delay Time 14 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 1mA
- Voltage Rating (DC) 1.2 kV
- Weight 38.000013 g
- Width 16.26 mm
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