IXTQ110N10P

IXTQ110N10P

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Product Code: IXTQ110N10P
Availability: In Stock
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 1000 mJ
  • Base Product Number IXTQ110
  • Brand IXYS
  • Case Connection DRAIN
  • Channel Mode Enhancement
  • Collector Current-Max (IC) 50 A
  • Collector Emitter Breakdown Voltage 1.2kV
  • Collector Emitter Voltage (VCEO) 2.6V
  • Collector-Emitter Voltage-Max 1200 V
  • Configuration Single
  • Continuous Drain Current (ID) 110A
  • Current - Collector (Ic) (Max) 50A
  • Current - Collector Cutoff (Max) 400μA
  • Current - Continuous Drain (Id) @ 25°C 110A Tc
  • Drain to Source Breakdown Voltage 100V
  • Drain to Source Resistance 15 mΩ
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.015Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 100 V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 25 ns
  • FET Feature --
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Gate-Emitter Voltage-Max 20V
  • Height 20.3 mm
  • IGBT Type NPT
  • Input Standard
  • Input Capacitance 3.55 nF
  • Input Capacitance (Cies) @ Vce 2nF @ 25V
  • Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 25V
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Length 15.8 mm
  • Manufacturer IXYS
  • Max Collector Current 50A
  • Max Operating Temperature 175 °C
  • Max Power Dissipation 480 W
  • Maximum Operating Temperature + 175 C
  • Mfr IXYS
  • Min Operating Temperature -55 °C
  • Minimum Operating Temperature - 55 C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Style Through Hole
  • Mounting Type Through Hole
  • NTC Thermistor No
  • Number of Channels 1 Channel
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminals 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package Tube
  • Package / Case TO-3P-3, SC-65-3
  • Package Shape RECTANGULAR
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Polarity/Channel Type N-CHANNEL
  • Power - Max 200W
  • Power Dissipation 480W
  • Power Dissipation (Max) 480W (Tc)
  • Power Dissipation-Max 480W Tc
  • Power Dissipation-Max (Abs) 200 W
  • Product Category MOSFET
  • Product Status Active
  • Product Type MOSFET
  • Published 2006
  • Pulsed Drain Current-Max (IDM) 250A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 15m Ω @ 500mA, 10V
  • Rds On Max 15 mΩ
  • Reach Compliance Code unknown
  • Rise Time 25ns
  • RoHS Details
  • RoHS Status ROHS3 Compliant
  • Series PolarHT™
  • Subcategory MOSFETs
  • Supplier Device Package TO-3P
  • Surface Mount NO
  • Terminal Finish Matte Tin (Sn)
  • Terminal Form THROUGH-HOLE
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Tradename PolarHT
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Transistor Polarity N-Channel
  • Transistor Type 1 N-Channel
  • Turn Off Time-Nom (toff) 490 ns
  • Turn On Time 135 ns
  • Turn-Off Delay Time 65 ns
  • Type PolarHT Power MOSFET
  • Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
  • VCEsat-Max 2.6 V
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Voltage - Collector Emitter Breakdown (Max) 1200V
  • Width 4.9 mm

Product Description

IXYS

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