IXTP160N10T
Item specifics
- Additional Feature HIGH RELIABILITY, UL RECOGNIZED
- Avalanche Energy Rating (Eas) 500 mJ
- Base Product Number IXTP160
- Brand IXYS
- Case Connection DRAIN
- Channel Mode Enhancement
- Channel Type N Channel
- Collector Current-Max (IC) 43 A
- Collector Emitter Breakdown Voltage 1.2kV
- Collector Emitter Voltage (VCEO) 2.2V
- Collector-Emitter Voltage-Max 1200 V
- Configuration Single
- Continuous Drain Current (ID) 160A
- Continuous Drain Current Id 160A
- Current - Collector (Ic) (Max) 43A
- Current - Collector Cutoff (Max) 2.1mA
- Current - Continuous Drain (Id) @ 25°C 160A Tc
- Drain to Source Breakdown Voltage 100V
- Drain to Source Voltage (Vdss) 100V
- Drain-source On Resistance-Max 0.007Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 42 ns
- FET Feature --
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
- Gate-Emitter Voltage-Max 20V
- Height 9.15 mm
- IGBT Type PT
- Input Standard
- Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-30 Code R-PSFM-T3
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.66 mm
- Manufacturer IXYS
- Max Collector Current 43A
- Max Power Dissipation 150 W
- Maximum Operating Temperature + 175 C
- Mfr IXYS
- Minimum Operating Temperature - 55 C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Style Through Hole
- Mounting Type Through Hole
- NTC Thermistor No
- Number of Channels 1 Channel
- Number of Elements 1
- Number of Terminals 9
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Operating Temperature (Max) 150°C
- Package Tube
- Package / Case TO-220-3
- Package Shape RECTANGULAR
- Packaging Tube
- Part Status Active
- Pbfree Code yes
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power - Max 150W
- Power Dissipation 430W
- Power Dissipation (Max) 430W (Tc)
- Power Dissipation-Max 430W Tc
- Power Dissipation-Max (Abs) 150 W
- Product IGBT Silicon Modules
- Product Category MOSFET
- Product Status Active
- Product Type MOSFET
- Published 2006
- Pulsed Drain Current-Max (IDM) 430A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
- Reach Compliance Code compliant
- Rise Time 61ns
- RoHS Details
- RoHS Status ROHS3 Compliant
- Series TrenchMV™
- Supplier Device Package TO-220AB
- Surface Mount YES
- Technology Si
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Tradename HiPerFET
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Transistor Type 1 N-Channel
- Turn Off Time-Nom (toff) 350 ns
- Turn On Time 110 ns
- Turn-Off Delay Time 49 ns
- Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
- VCEsat-Max 2.2 V
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 250μA
- Voltage - Collector Emitter Breakdown (Max) 1200V
- Width 4.83 mm
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