APTGF100A120T3AG
Item specifics
- Case Connection ISOLATED
- Collector Current-Max (IC) 130 A
- Collector Emitter Breakdown Voltage 1.2 kV
- Collector Emitter Voltage (VCEO) 1.2 kV
- Collector-Emitter Voltage-Max 1200 V
- Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- ECCN Code EAR99
- Element Configuration Dual
- Gate-Emitter Voltage-Max 20 V
- Ihs Manufacturer MICROSEMI CORP
- Input Standard
- Input Capacitance 6.5 nF
- JESD-30 Code R-XUFM-X10
- Manufacturer Microsemi Corporation
- Manufacturer Part Number APTGF100A120T3AG
- Max Collector Current 130 A
- Max Operating Temperature 150 °C
- Max Power Dissipation 780 W
- Min Operating Temperature -40 °C
- Mount Chassis Mount, Screw
- NTC Thermistor Yes
- Number of Elements 2
- Number of Pins 20
- Number of Terminals 10
- Operating Temperature-Max 150 °C
- Package Body Material UNSPECIFIED
- Package Description FLANGE MOUNT, R-XUFM-X10
- Package Shape RECTANGULAR
- Package Style FLANGE MOUNT
- Part Life Cycle Code Obsolete
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 25
- Polarity/Channel Type N-CHANNEL
- Power Dissipation-Max (Abs) 780 W
- Qualification Status Not Qualified
- Reach Compliance Code compliant
- Reflow Temperature-Max (s) NOT SPECIFIED
- Risk Rank 5.72
- RoHS Compliant
- Rohs Code Yes
- Subcategory Insulated Gate BIP Transistors
- Surface Mount NO
- Terminal Form UNSPECIFIED
- Terminal Position UPPER
- Transistor Application POWER CONTROL
- Transistor Element Material SILICON
- Turn-off Time-Nom (toff) 390 ns
- Turn-on Time-Nom (ton) 190 ns
- VCEsat-Max 3.7 V
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