APT35GT120JU2

APT35GT120JU2

Product Code: APT35GT120JU2
Availability: In Stock
Viewed 4 times
Price: $5.57
0 sold. Only 16166 remain

Item specifics

  • Additional Feature AVALANCHE RATED, LOW CONDUCTION LOSS
  • Case Connection ISOLATED
  • Collector Emitter Breakdown Voltage 1.2kV
  • Collector Emitter Voltage (VCEO) 2.1V
  • Configuration Single
  • Current - Collector Cutoff (Max) 5mA
  • ECCN Code EAR99
  • Gate-Emitter Voltage-Max 20V
  • IGBT Type Trench Field Stop
  • Input Standard
  • Input Capacitance 2.53nF
  • Input Capacitance (Cies) @ Vce 2.53nF @ 25V
  • Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
  • Max Collector Current 55A
  • Max Power Dissipation 260W
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • NTC Thermistor No
  • Number of Elements 1
  • Number of Pins 4
  • Number of Terminations 4
  • Operating Temperature -55°C~150°C TJ
  • Package / Case ISOTOP
  • Part Status Active
  • Pbfree Code yes
  • Pin Count 4
  • Polarity/Channel Type N-CHANNEL
  • Power - Max 260W
  • RoHS Status RoHS Compliant
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Transistor Application POWER CONTROL
  • Transistor Element Material SILICON
  • Turn Off Time-Nom (toff) 610 ns
  • Turn On Time 135 ns
  • Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
  • Voltage - Collector Emitter Breakdown (Max) 1200V

Product Description

Microsemi Corporation

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