APT80GP60J
Item specifics
- Additional Feature LOW CONDUCTION LOSS
- Base Product Number APT80GP60
- Case Connection ISOLATED
- Collector Current-Max (IC) 151 A
- Collector Emitter Breakdown Voltage 600 V
- Collector Emitter Voltage (VCEO) 600 V
- Collector-Emitter Voltage-Max 600 V
- Configuration Single
- Current - Collector (Ic) (Max) 151 A
- Current - Collector Cutoff (Max) 1 mA
- Current Rating 151 A
- Element Configuration Single
- Gate-Emitter Voltage-Max 20 V
- IGBT Type PT
- Input Standard
- Input Capacitance 9.84 nF
- Input Capacitance (Cies) @ Vce 9.84 nF @ 25 V
- JESD-30 Code R-PUFM-X4
- JESD-609 Code e1
- Lead Free Lead Free
- Lifecycle Status Production (Last Updated: 2 months ago)
- Max Collector Current 151 A
- Max Operating Temperature 150 °C
- Max Power Dissipation 462 W
- Maximum Operating Temperature + 150 C
- Mfr Microchip Technology
- Min Operating Temperature -55 °C
- Minimum Operating Temperature - 55 C
- Mount Chassis Mount, Screw
- Mounting Style SMD/SMT
- Mounting Type Chassis Mount
- NTC Thermistor No
- Number of Elements 1
- Number of Pins 4
- Number of Terminals 4
- Operating Temperature -55°C ~ 150°C (TJ)
- Package Tube
- Package / Case ISOTOP-4
- Package Shape RECTANGULAR
- Packaging Tube
- Pbfree Code Yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 4
- Polarity/Channel Type N-CHANNEL
- Power - Max 462 W
- Power Dissipation-Max (Abs) 462 W
- Product IGBT Silicon Modules
- Product Status Active
- Qualification Status Not Qualified
- Radiation Hardening No
- Reach Compliance Code unknown
- RoHS Details
- Series POWER MOS 7®
- Supplier Device Package ISOTOP®
- Surface Mount NO
- Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form UNSPECIFIED
- Terminal Position UPPER
- Transistor Application POWER CONTROL
- Transistor Element Material SILICON
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 80A
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Voltage Rating (DC) 600 V
Product Description
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