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APT35GP120JDQ2
APT35GP120JDQ2

APT35GP120JDQ2

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Product Code: APT35GP120JDQ2
Availability: In Stock
Viewed 5 times
Price: $13.96
0 sold. Only 15182 remain

Item specifics

  • Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
  • Case Connection ISOLATED
  • Collector Emitter Breakdown Voltage 1.2kV
  • Collector Emitter Voltage (VCEO) 3.9V
  • Configuration Single
  • Current - Collector Cutoff (Max) 350μA
  • Current Rating 64A
  • Gate-Emitter Voltage-Max 30V
  • IGBT Type PT
  • Input Standard
  • Input Capacitance 3.24nF
  • Input Capacitance (Cies) @ Vce 3.24nF @ 25V
  • JESD-609 Code e1
  • Lead Free Lead Free
  • Max Collector Current 64A
  • Max Power Dissipation 284W
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • NTC Thermistor No
  • Number of Elements 1
  • Number of Pins 4
  • Number of Terminations 4
  • Operating Temperature -55°C~150°C TJ
  • Package / Case ISOTOP
  • Part Status Active
  • Pbfree Code yes
  • Pin Count 4
  • Polarity/Channel Type N-CHANNEL
  • Published 1999
  • RoHS Status RoHS Compliant
  • Series POWER MOS 7®
  • Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Transistor Application POWER CONTROL
  • Transistor Element Material SILICON
  • Turn Off Time-Nom (toff) 220 ns
  • Turn On Time 36 ns
  • Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
  • Voltage - Collector Emitter Breakdown (Max) 1200V
  • Voltage - Rated DC 1.2kV

Product Description

Microsemi Corporation

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