NUS5530MNR2G
Item specifics
- Applications General Purpose
- Base Part Number NUS5530MN
- Collector Base Voltage (VCBO) -55V
- Collector Emitter Saturation Voltage -100mV
- Collector Emitter Voltage (VCEO) 35V
- Continuous Drain Current (ID) -3.9A
- Current Rating 3.9A
- Current Rating (Amps) 2A PNP 3.9A P-Channel
- DC Current Gain-Min (hFE) 100
- Drain to Source Resistance 200Ohm
- DS Breakdown Voltage-Min 20V
- ECCN Code EAR99
- Element Configuration Dual
- Emitter Base Voltage (VEBO) -5V
- Fall Time-Max (tf) 70ns
- FET Technology METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) -35V
- Halogen Free Halogen Free
- Height 950μm
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.3mm
- Lifecycle Status ACTIVE (Last Updated: 5 days ago)
- Max Collector Current 2A
- Max Frequency 100MHz
- Max Operating Temperature 150°C
- Max Power Dissipation 2.5W
- Min Operating Temperature -55°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Package / Case 8-VDFN Exposed Pad
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 635mW
- Published 2006
- Pulsed Drain Current-Max (IDM) 20A
- Radiation Hardening No
- Rise Time-Max 55ns
- RoHS Status ROHS3 Compliant
- Surface Mount YES
- Terminal Finish Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Type NPN, P-Channel
- VCEsat-Max 0.3 V
- Voltage - Rated 35V PNP 20V P-Channel
- Width 3.3mm
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