2N7002KT1G
Item specifics
- Contact Plating Tin
- Continuous Drain Current (ID) 380mA
- Current - Continuous Drain (Id) @ 25°C 320mA Ta
- Drain to Source Breakdown Voltage 60V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 9 ns
- Feedback Cap-Max (Crss) 5 pF
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Height 1.11mm
- Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.04mm
- Lifecycle Status ACTIVE (Last Updated: 3 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Nominal Vgs 2.3 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 420mW
- Power Dissipation-Max 350mW Ta
- Published 2008
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
- REACH SVHC No SVHC
- Resistance 1.6Ohm
- Rise Time 9ns
- RoHS Status ROHS3 Compliant
- Surface Mount YES
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage 2.3V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 12.2 ns
- Turn-Off Delay Time 55.8 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
- Width 1.4mm
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