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IXFM12N100
IXFM12N100

IXFM12N100

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Brand:
Product Code: IXFM12N100
Availability: In Stock
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Price: $8.71
0 sold. Only 1876 remain

Item specifics

  • Automotive No
  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Continuous Drain Current (ID) 12 A
  • Drain to Source Breakdown Voltage 1 kV
  • Drain to Source Resistance 1.05 Ω
  • Element Configuration Single
  • EU RoHS Compliant
  • Gate to Source Voltage (Vgs) 20 V
  • Material Si
  • Max Operating Temperature 150 °C
  • Maximum Continuous Drain Current (A) 12
  • Maximum Drain Source Voltage (V) 1000
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 300000
  • Min Operating Temperature -55 °C
  • Minimum Operating Temperature (°C) -55
  • Mounting Through Hole
  • Number of Elements per Chip 1
  • Package Height 11.4(Max)
  • Package Length 30.15 + 9.54(Max)
  • Package Width 26.66
  • Part Status Obsolete
  • PCB changed 2
  • Pin Count 3
  • Power Dissipation 300 W
  • PPAP No
  • Process Technology HDMOS
  • Rise Time 33 ns
  • RoHS Compliant
  • Supplier Package TO-204AA
  • Tab Tab
  • Turn-Off Delay Time 62 ns
  • Typical Fall Time (ns) 32
  • Typical Gate Charge @ 10V (nC) 122
  • Typical Gate Charge @ Vgs (nC) 122@10V
  • Typical Input Capacitance @ Vds (pF) 4000@25V
  • Typical Rise Time (ns) 33
  • Typical Turn-Off Delay Time (ns) 62
  • Typical Turn-On Delay Time (ns) 21

Product Description

IXYS Integrated Circuits Division / Littelfuse

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