IXFM20N60
Item specifics
- Additional Feature AVALANCHE RATED
- Automotive No
- Case Connection DRAIN
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Drain Current-Max (Abs) (ID) 20 A
- Drain-source On Resistance-Max 0.35 Ω
- DS Breakdown Voltage-Min 600 V
- ECCN (US) EAR99
- EU RoHS Compliant
- FET Technology METAL-OXIDE SEMICONDUCTOR
- HTS 8541.29.00.95
- JEDEC-95 Code TO-204
- JESD-30 Code O-MBFM-P2
- Manufacturer IXYS Corporation
- Material Si
- Maximum Continuous Drain Current (A) 20
- Maximum Drain Source Voltage (V) 600
- Maximum Gate Source Voltage (V) ±20
- Maximum Operating Temperature (°C) 150
- Maximum Power Dissipation (mW) 300000
- Minimum Operating Temperature (°C) -55
- Mounting Through Hole
- Number of Elements 1
- Number of Elements per Chip 1
- Number of Terminals 2
- Operating Mode ENHANCEMENT MODE
- Package Height 11.4(Max)
- Package Length 39.12(Max)
- Package Shape ROUND
- Package Width 26.66(Max)
- Part Status Obsolete
- Pbfree Code Yes
- PCB changed 2
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Polarity/Channel Type N-CHANNEL
- Power Dissipation Ambient-Max 300 W
- Power Dissipation-Max (Abs) 300 W
- PPAP No
- Process Technology HiperFET
- Pulsed Drain Current-Max (IDM) 80 A
- Qualification Status Not Qualified
- Reach Compliance Code compliant
- Subcategory FET General Purpose Power
- Supplier Package TO-204AE
- Surface Mount NO
- Tab Tab
- Terminal Form PIN/PEG
- Terminal Position BOTTOM
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Typical Fall Time (ns) 40
- Typical Gate Charge @ 10V (nC) 151
- Typical Gate Charge @ Vgs (nC) 151@10V
- Typical Input Capacitance @ Vds (pF) 4500@25V
- Typical Rise Time (ns) 43
- Typical Turn-Off Delay Time (ns) 70
- Typical Turn-On Delay Time (ns) 20
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