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AOB410L
AOB410L

AOB410L

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Product Code: AOB410L
Availability: In Stock
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Price: $2.96
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Item specifics

  • Automotive Unknown
  • Base Product Number AOB410
  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Current - Continuous Drain (Id) @ 25°C 12A (Ta), 150A (Tc)
  • Drain Current-Max (Abs) (ID) 150 A
  • Drain to Source Voltage (Vdss) 100 V
  • Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
  • ECCN (US) EAR99
  • EU RoHS Compliant
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 129 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 7950 pF @ 50 V
  • Manufacturer Alpha & Omega Semiconductor
  • Maximum Continuous Drain Current (A) 12
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±25
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum IDSS (uA) 10
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 333000
  • Mfr Alpha & Omega Semiconductor Inc.
  • Minimum Operating Temperature (°C) -55
  • Mounting Surface Mount
  • Number of Elements per Chip 1
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Package Bulk
  • Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Package Height 4.45
  • Package Length 10.03
  • Package Width 9.14
  • Packaging Tape and Reel
  • Part Status Active
  • PCB changed 2
  • Pin Count 3
  • Polarity/Channel Type N-CHANNEL
  • Power Dissipation (Max) 1.9W (Ta), 333W (Tc)
  • Power Dissipation-Max (Abs) 333 W
  • PPAP Unknown
  • Process Technology TMOS
  • Product Status Active
  • Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
  • Reach Compliance Code compliant
  • Series SDMOS™
  • Standard Package Name TO-263
  • Subcategory FET General Purpose Powers
  • Supplier Device Package TO-263 (D2Pak)
  • Supplier Package D2PAK
  • Surface Mount YES
  • Tab Tab
  • Technology MOSFET (Metal Oxide)
  • Typical Fall Time (ns) 14.5
  • Typical Gate Charge @ 10V (nC) 107
  • Typical Gate Charge @ Vgs (nC) 107@10V
  • Typical Input Capacitance @ Vds (pF) 6622@50V
  • Typical Rise Time (ns) 22
  • Typical Turn-Off Delay Time (ns) 43.5
  • Typical Turn-On Delay Time (ns) 28
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250µA

Product Description

Alpha and Omega Semiconductor, Inc.

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