BLA0912-250,112

Item specifics

• Channel Mode Enhancement
• Channel Type N
• Configuration Single
• Continuous Drain Current (ID) 300 mA
• Current Rating 45 A
• Drain to Source Breakdown Voltage 75 V
• Drain to Source Resistance 60 mΩ
• Drain to Source Voltage (Vdss) 75 V
• ECCN (US) EAR99
• Element Configuration Single
• Frequency 960 MHz
• Gain 13 dB
• Gate to Source Voltage (Vgs) 22 V
• Lead Free Lead Free
• Max Frequency 1.215 GHz
• Max Operating Temperature 200 °C
• Max Output Power 250 W
• Max Power Dissipation 700 W
• Maximum Drain Source Resistance (mOhm) 60(Typ)@9V
• Maximum Drain Source Voltage (V) 75
• Maximum Frequency (MHz) 1215
• Maximum Gate Source Voltage (V) ±22
• Maximum Operating Temperature (°C) 200
• Maximum Power Dissipation (mW) 700000
• Maximum VSWR 5
• Military No
• Min Operating Temperature -65 °C
• Minimum Frequency (MHz) 960
• Minimum Operating Temperature (°C) -65
• Mode of Operation Class AB
• Mount Screw
• Mounting Screw
• Number of Elements 1
• Number of Elements per Chip 1
• Number of Pins 3
• Output Power 250 W
• Output Power (W) 250(Min)
• Package Height 4.72(Max)
• Package Length 34.16(Max)
• Package Width 9.91(Max)
• Packaging Bulk
• Part Status Obsolete
• PCB changed 3
• Pin Count 3
• Power Dissipation 700 W
• Process Technology LDMOS
• Rise Time 25 ns
• RoHS Compliant
• RoHS Status Supplier Unconfirmed
• Supplier Package SOT-502A
• Test Voltage 36 V
• Typical Drain Efficiency (%) 50
• Typical Fall Time (ns) 6
• Typical Forward Transconductance (S) 9
• Typical Power Gain (dB) 13
• Typical Rise Time (ns) 25
• Voltage Rating 75 V

Product Description