D1002UK
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Item specifics
- Additional Feature LOW NOISE
- Brand Semelab / TT Electronics
- Case Connection SOURCE
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Continuous Drain Current (ID) 10 A
- DS Breakdown Voltage-Min 70 V
- ECCN Code EAR99
- Element Configuration Single
- Factory Pack Quantity:Factory Pack Quantity 25
- FET Technology METAL-OXIDE SEMICONDUCTOR
- Gain 16 dB
- Gate to Source Voltage (Vgs) 20 V
- Height 6.6mm
- Highest Frequency Band ULTRA HIGH FREQUENCY BAND
- Id - Continuous Drain Current 10 A
- Ihs Manufacturer SEMELAB LTD
- Input Capacitance 120 pF
- JESD-30 Code O-CRFM-F4
- JESD-609 Code e4
- Length 24.76mm
- Manufacturer TT Electronics
- Manufacturer Part Number D1002UK
- Max Operating Temperature 200 °C
- Max Power Dissipation 87 W
- Maximum Operating Temperature +200 °C
- Mounting Style SMD/SMT
- Mounting Type Screw Mount
- Number of Elements 1
- Number of Elements per Chip 1
- Number of Pins 4
- Number of Terminals 4
- Operating Frequency 175 MHz
- Operating Mode ENHANCEMENT MODE
- Operating Temperature-Max 200 °C
- Output Power 40 W
- Package / Case DA
- Package Body Material CERAMIC, METAL-SEALED COFIRED
- Package Description FLANGE MOUNT, O-CRFM-F4
- Package Shape ROUND
- Package Style FLANGE MOUNT
- Package Type DA
- Part Life Cycle Code Active
- Pbfree Code No
- Pd - Power Dissipation 87 W
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 4
- Polarity/Channel Type N-CHANNEL
- Product Category RF MOSFET Transistors
- Product Type RF MOSFET Transistors
- Qualification Status Not Qualified
- Reach Compliance Code compliant
- Reflow Temperature-Max (s) NOT SPECIFIED
- Risk Rank 5.05
- RoHS Compliant
- Rohs Code Yes
- Series TetraFET
- Subcategory MOSFETs
- Surface Mount YES
- Technology Si
- Terminal Finish GOLD
- Terminal Form FLAT
- Terminal Position RADIAL
- Transistor Application AMPLIFIER
- Transistor Element Material SILICON
- Transistor Polarity N-Channel
- Transistor Type DMOS FET
- Type RF Power MOSFET
- Unit Weight 0.381488 oz
- Vds - Drain-Source Breakdown Voltage 70 V
- Vgs - Gate-Source Voltage 20 V
- Vgs th - Gate-Source Threshold Voltage 1 V to 7 V
- Width 9.52mm
Product Description
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