IRLL2705TRPBF
Item specifics
- Additional Feature LOGIC LEVEL COMPATIBLE
- Case Connection DRAIN
- Continuous Drain Current (ID) 3.8A
- Current - Continuous Drain (Id) @ 25°C 3.8A Ta
- Current Rating 3.8A
- Drain Current-Max (Abs) (ID) 5.2A
- Drain to Source Breakdown Voltage 55V
- Drive Voltage (Max Rds On,Min Rds On) 4V 10V
- Dual Supply Voltage 55V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 22 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
- Gate to Source Voltage (Vgs) 16V
- Height 1.8mm
- Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
- JESD-30 Code R-PDSO-G4
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.6802mm
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 2 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-261-4, TO-261AA
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 2.1W
- Power Dissipation-Max 1W Ta
- Published 1997
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
- REACH SVHC No SVHC
- Recovery Time 88 ns
- Resistance 40mOhm
- Rise Time 12ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage 2V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Element Material SILICON
- Turn On Delay Time 6.2 ns
- Turn-Off Delay Time 35 ns
- Vgs (Max) ±16V
- Vgs(th) (Max) @ Id 2V @ 250μA
- Voltage - Rated DC 55V
- Width 6.7mm
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