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FQP12N60C
FQP12N60C

FQP12N60C

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Product Code: FQP12N60C
Availability: In Stock
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Price: $14.59
0 sold. Only 36271 remain

Item specifics

  • Avalanche Energy Rating (Eas) 870 mJ
  • Continuous Drain Current (ID) 12A
  • Current - Continuous Drain (Id) @ 25°C 12A Tc
  • Current Rating 12A
  • Drain to Source Breakdown Voltage 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Dual Supply Voltage 600V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 90 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 9.4mm
  • Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 10.1mm
  • Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Nominal Vgs 4 V
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Not For New Designs
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 225W
  • Power Dissipation-Max 225W Tc
  • Pulsed Drain Current-Max (IDM) 48A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 650m Ω @ 6A, 10V
  • REACH SVHC No SVHC
  • Resistance 650mOhm
  • Rise Time 85ns
  • RoHS Status ROHS3 Compliant
  • Series QFET®
  • Terminal Finish Tin (Sn)
  • Termination Through Hole
  • Threshold Voltage 4V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 30 ns
  • Turn-Off Delay Time 155 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Voltage - Rated DC 600V
  • Weight 1.8g
  • Width 4.7mm

Product Description

ON Semiconductor

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