IRFS23N20DTRLP
Item specifics
- Avalanche Energy Rating (Eas) 250 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 24A
- Current - Continuous Drain (Id) @ 25°C 24A Tc
- Current Rating 24A
- Drain to Source Breakdown Voltage 200V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 200V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 16 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 4.826mm
- Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Contains Lead, Lead Free
- Length 10.668mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 5.5 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Not For New Designs
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 3.8W
- Power Dissipation-Max 3.8W Ta 170W Tc
- Published 2004
- Pulsed Drain Current-Max (IDM) 96A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 100m Ω @ 14A, 10V
- REACH SVHC No SVHC
- Resistance 100mOhm
- Rise Time 32ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form GULL WING
- Termination SMD/SMT
- Threshold Voltage 5.5V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 14 ns
- Turn-Off Delay Time 26 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5.5V @ 250μA
- Voltage - Rated DC 200V
- Width 9.65mm
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