IRF7769L2TRPBF
Item specifics
- Avalanche Energy Rating (Eas) 260 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 20A
- Current - Continuous Drain (Id) @ 25°C 375A Tc
- Drain Current-Max (Abs) (ID) 395A
- Drain to Source Breakdown Voltage 100V
- Drain-source On Resistance-Max 0.0035Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Fall Time (Typ) 41 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 676μm
- Input Capacitance (Ciss) (Max) @ Vds 11560pF @ 25V
- JESD-30 Code R-XBCC-N9
- JESD-609 Code e1
- Length 9.144mm
- Max Junction Temperature (Tj) 175°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 2.7 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 11
- Number of Terminations 9
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case DirectFET™ Isometric L8
- Packaging Tape & Reel (TR)
- Part Status Not For New Designs
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 3.3W
- Power Dissipation-Max 3.3W Ta 125W Tc
- Published 2010
- Pulsed Drain Current-Max (IDM) 500A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 3.5m Ω @ 74A, 10V
- REACH SVHC No SVHC
- Recovery Time 112 ns
- Rise Time 32ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish TIN SILVER COPPER
- Terminal Position BOTTOM
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 44 ns
- Turn-Off Delay Time 92 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Width 7.112mm
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