FQP8N60C
Item specifics
- Additional Feature FAST SWITCHING
- Continuous Drain Current (ID) 7.5A
- Current - Continuous Drain (Id) @ 25°C 7.5A Tc
- Current Rating 7.5A
- Drain to Source Breakdown Voltage 600V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 600V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 64.5 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 9.4mm
- Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.1mm
- Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Not For New Designs
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 147W
- Power Dissipation-Max 147W Tc
- Published 2004
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 1.2 Ω @ 3.75A, 10V
- REACH SVHC No SVHC
- Resistance 1.2Ohm
- Rise Time 60.5ns
- RoHS Status ROHS3 Compliant
- Series QFET®
- Terminal Finish Tin (Sn)
- Termination Through Hole
- Threshold Voltage 4V
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 16.5 ns
- Turn-Off Delay Time 81 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 600V
- Weight 1.8g
- Width 4.7mm
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