CSD19537Q3
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 55 mJ
- Base Part Number CSD19537
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Contact Plating Copper, Tin
- Continuous Drain Current (ID) 9.7A
- Current - Continuous Drain (Id) @ 25°C 50A Ta
- Drain to Source Breakdown Voltage 100V
- Drive Voltage (Max Rds On,Min Rds On) 6V 10V
- ECCN Code EAR99
- Fall Time (Typ) 3 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.1mm
- Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
- JESD-609 Code e3
- Lead Free Contains Lead
- Length 3.3mm
- Lifecycle Status ACTIVE (Last Updated: 5 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-PowerVDFN
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Power Dissipation 2.8W
- Power Dissipation-Max 2.8W Ta 83W Tc
- Rds On (Max) @ Id, Vgs 14.5m Ω @ 10A, 10V
- Reach Compliance Code not_compliant
- Rise Time 3ns
- RoHS Status ROHS3 Compliant
- Series NexFET™
- Terminal Finish Matte Tin (Sn)
- Terminal Form NO LEAD
- Terminal Position DUAL
- Thickness 1mm
- Threshold Voltage 3V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 5 ns
- Turn-Off Delay Time 10 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.6V @ 250μA
- Width 3.3mm
Product Description
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