SUD50P06-15L-E3
Item specifics
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) -50A
- Current - Continuous Drain (Id) @ 25°C 50A Tc
- Drain to Source Breakdown Voltage -60V
- Drain to Source Voltage (Vdss) 60V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 175 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 2.39mm
- Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.73mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs -1 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Pin Count 4
- Power Dissipation 3W
- Power Dissipation-Max 3W Ta 136W Tc
- Published 2011
- Pulsed Drain Current-Max (IDM) 80A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 15m Ω @ 17A, 10V
- REACH SVHC No SVHC
- Resistance 15mOhm
- Rise Time 70ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Form GULL WING
- Threshold Voltage -3V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 15 ns
- Turn-Off Delay Time 175 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Weight 1.437803g
- Width 6.22mm
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