STB20NM60D

STB20NM60D

Product Code: STB20NM60D
Availability: In Stock
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Price: $13.74
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Item specifics

  • Avalanche Energy Rating (Eas) 700 mJ
  • Base Part Number STB20N
  • Contact Plating Tin
  • Continuous Drain Current (ID) 20A
  • Current - Continuous Drain (Id) @ 25°C 20A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 22 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -65°C~150°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Peak Reflow Temperature (Cel) 245
  • Pin Count 3
  • Power Dissipation 192W
  • Power Dissipation-Max 192W Tc
  • Pulsed Drain Current-Max (IDM) 80A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
  • Resistance 290mOhm
  • Rise Time 12ns
  • RoHS Status ROHS3 Compliant
  • Series FDmesh™
  • Terminal Form GULL WING
  • Time@Peak Reflow Temperature-Max (s) 30
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 25 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA

Product Description

STMicroelectronics

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