IPP120N08S403AKSA1
Item specifics
- Avalanche Energy Rating (Eas) 920 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 120A
- Current - Continuous Drain (Id) @ 25°C 120A Tc
- Drain to Source Breakdown Voltage 80V
- Drain-source On Resistance-Max 0.0028Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Fall Time (Typ) 50 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Height 20.7mm
- Input Capacitance (Ciss) (Max) @ Vds 11550pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Contains Lead
- Max Dual Supply Voltage 80V
- Max Junction Temperature (Tj) 175°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 278W
- Power Dissipation-Max 278W Tc
- Published 2013
- Pulsed Drain Current-Max (IDM) 480A
- Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V
- Reach Compliance Code not_compliant
- Rise Time 15ns
- RoHS Status ROHS3 Compliant
- Series Automotive, AEC-Q101, OptiMOS™
- Terminal Finish Tin (Sn)
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Element Material SILICON
- Turn On Delay Time 30 ns
- Turn-Off Delay Time 60 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 223μA
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