BBS3002-TL-1E
Item specifics
- Avalanche Energy Rating (Eas) 340 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) -100A
- Current - Continuous Drain (Id) @ 25°C 100A Ta
- Drain to Source Breakdown Voltage -60V
- Drain to Source Voltage (Vdss) 60V
- Drain-source On Resistance-Max 0.009Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4V 10V
- ECCN Code EAR99
- Fall Time (Typ) 820 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 5.08mm
- Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 20V
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status ACTIVE (Last Updated: 5 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 2
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Pin Count 2
- Power Dissipation 90W
- Power Dissipation-Max 90W Tc
- Published 1999
- Pulsed Drain Current-Max (IDM) 400A
- Rds On (Max) @ Id, Vgs 5.8m Ω @ 50A, 10V
- Reach Compliance Code not_compliant
- Rise Time 1μs
- RoHS Status ROHS3 Compliant
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position SINGLE
- Transistor Element Material SILICON
- Turn On Delay Time 95 ns
- Turn-Off Delay Time 800 ns
- Vgs (Max) ±20V
- Weight 2.084002g
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