SI2342DS-T1-GE3
Item specifics
- Configuration SINGLE WITH BUILT-IN DIODE
- Contact Plating Tin
- Continuous Drain Current (ID) 6A
- Current - Continuous Drain (Id) @ 25°C 6A Tc
- Drain Current-Max (Abs) (ID) 6A
- Drain to Source Breakdown Voltage 8V
- Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
- ECCN Code EAR99
- Fall Time (Typ) 25 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 15.8nC @ 4.5V
- Gate to Source Voltage (Vgs) 5V
- Height 1.12mm
- Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V
- JESD-609 Code e3
- Lead Free Lead Free
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 1.3W
- Power Dissipation-Max 2.5W Tc
- Published 2015
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 17m Ω @ 7.2A, 4.5V
- REACH SVHC No SVHC
- Rise Time 14ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage 800mV
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 6 ns
- Turn-Off Delay Time 65 ns
- Vgs (Max) ±5V
- Vgs(th) (Max) @ Id 800mV @ 250μA
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