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SCT2H12NZGC11
SCT2H12NZGC11

SCT2H12NZGC11

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Product Code: SCT2H12NZGC11
Availability: In Stock
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Price: $6.62
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Item specifics

  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 3.7A
  • Current - Continuous Drain (Id) @ 25°C 3.7A Tc
  • Drain to Source Breakdown Voltage 1.7kV
  • Drain to Source Voltage (Vdss) 1700V
  • Drive Voltage (Max Rds On,Min Rds On) 18V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
  • Gate to Source Voltage (Vgs) 22V
  • Height 26.5mm
  • Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
  • Lead Free Lead Free
  • Max Junction Temperature (Tj) 175°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 175°C TJ
  • Package / Case TO-3PFM, SC-93-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 35W
  • Power Dissipation-Max 35W Tc
  • Published 2014
  • Pulsed Drain Current-Max (IDM) 9.2A
  • Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.1A, 18V
  • Reach Compliance Code not_compliant
  • REACH SVHC Unknown
  • RoHS Status ROHS3 Compliant
  • Terminal Position SINGLE
  • Threshold Voltage 2.8V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Turn On Delay Time 16 ns
  • Turn-Off Delay Time 35 ns
  • Vgs (Max) +22V, -6V
  • Vgs(th) (Max) @ Id 4V @ 900μA

Product Description

ROHM Semiconductor

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