ZXMN3B04N8TA
Item specifics
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 8.9A
- Current - Continuous Drain (Id) @ 25°C 7.2A Ta
- Current Rating 7.6A
- Drain Current-Max (Abs) (ID) 7.2A
- Drain to Source Breakdown Voltage 30V
- Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
- ECCN Code EAR99
- Fall Time (Typ) 16.6 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 4.5V
- Gate to Source Voltage (Vgs) 12V
- Height 1.5mm
- Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 15V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 5mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 3W
- Power Dissipation-Max 2W Ta
- Published 2006
- Pulsed Drain Current-Max (IDM) 45A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 25m Ω @ 7.2A, 4.5V
- REACH SVHC No SVHC
- Resistance 25mOhm
- Rise Time 11.5ns
- RoHS Status ROHS3 Compliant
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 9 ns
- Turn-Off Delay Time 40 ns
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 700mV @ 250μA
- Voltage - Rated DC 30V
- Weight 73.992255mg
- Width 4mm
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