ZXM61P03FTA
Item specifics
- Additional Feature LOW THRESHOLD
- Contact Plating Tin
- Continuous Drain Current (ID) 1.1A
- Current - Continuous Drain (Id) @ 25°C 1.1A Ta
- Current Rating -1.1A
- Drain to Source Breakdown Voltage -30V
- Drain to Source Voltage (Vdss) 30V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- Dual Supply Voltage -30V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 2.9 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.1mm
- Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.04mm
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs -1 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 625mW
- Power Dissipation-Max 625mW Ta
- Published 2006
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 350m Ω @ 600mA, 10V
- REACH SVHC No SVHC
- Resistance 350mOhm
- Rise Time 2.9ns
- RoHS Status ROHS3 Compliant
- Terminal Form GULL WING
- Terminal Position DUAL
- Termination SMD/SMT
- Threshold Voltage 1V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 1.9 ns
- Turn-Off Delay Time 8.9 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 1V @ 250μA
- Voltage - Rated DC -30V
- Weight 7.994566mg
- Width 1.4mm
Product Description
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