FDP19N40

FDP19N40

Product Code: FDP19N40
Availability: In Stock
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Price: $0.18
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Item specifics

  • Avalanche Energy Rating (Eas) 542 mJ
  • Continuous Drain Current (ID) 19A
  • Current - Continuous Drain (Id) @ 25°C 19A Tc
  • Drain to Source Breakdown Voltage 400V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 49 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 2115pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 2 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 215W
  • Power Dissipation-Max 215W Tc
  • Published 2013
  • Pulsed Drain Current-Max (IDM) 76A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 240m Ω @ 9.5A, 10V
  • Resistance 240MOhm
  • Rise Time 70ns
  • RoHS Status ROHS3 Compliant
  • Series UniFET™
  • Terminal Finish Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 31 ns
  • Turn-Off Delay Time 82 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Weight 1.8g

Product Description

ON Semiconductor

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