SI1032X-T1-GE3
Item specifics
- Additional Feature LOW THRESHOLD
- Continuous Drain Current (ID) 200mA
- Current - Continuous Drain (Id) @ 25°C 200mA Ta
- Drain Current-Max (Abs) (ID) 0.2A
- Drain to Source Voltage (Vdss) 20V
- Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
- DS Breakdown Voltage-Min 20V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 25 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
- Gate to Source Voltage (Vgs) 6V
- Height 800μm
- JESD-609 Code e3
- Lead Free Lead Free
- Length 1.7mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case SC-89, SOT-490
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 300mW
- Power Dissipation-Max 300mW Ta
- Published 2013
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 4.5V
- REACH SVHC Unknown
- Resistance 5Ohm
- Rise Time 25ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Finish Matte Tin (Sn)
- Terminal Form FLAT
- Terminal Position DUAL
- Threshold Voltage 700mV
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 50 ns
- Turn-Off Delay Time 50 ns
- Vgs (Max) ±6V
- Vgs(th) (Max) @ Id 1.2V @ 250μA
- Weight 29.993795mg
- Width 950μm
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