TPS1100DR
Item specifics
- Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Base Part Number TPS1100
- Configuration SINGLE WITH BUILT-IN DIODE
- Contact Plating Gold
- Continuous Drain Current (ID) 1.6A
- Current - Continuous Drain (Id) @ 25°C 1.6A Ta
- Drain to Source Breakdown Voltage 15V
- Drain-source On Resistance-Max 0.4Ohm
- Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
- ECCN Code EAR99
- Fall Time (Typ) 10 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
- Gate to Source Voltage (Vgs) 2V
- Height 1.75mm
- JEDEC-95 Code MS-012AA
- JESD-609 Code e4
- Lead Free Lead Free
- Length 4.9mm
- Lifecycle Status ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -40°C~150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 791mW
- Power Dissipation-Max 791mW Ta
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
- Rise Time 10ns
- RoHS Status ROHS3 Compliant
- Terminal Form GULL WING
- Terminal Position DUAL
- Thickness 1.58mm
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 4.5 ns
- Turn-Off Delay Time 13 ns
- Vgs (Max) +2V, -15V
- Vgs(th) (Max) @ Id 1.5V @ 250μA
- Width 3.91mm
Product Description
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